221 résultats
1998G0818683538I3N10IEEE Computer Society 1998. Paperback. Good. Former library book; Pages can have notes/highlighting. Spine may show signs of wear. ~ ThriftBooks: Read More Spend Less.Dust jacket quality is not guaranteed. IEEE Computer Society paperback
1999G076950468XI3N00IEEE 1999. Paperback. Good. Pages can have notes/highlighting. Spine may show signs of wear. ~ ThriftBooks: Read More Spend Less.Dust jacket quality is not guaranteed. IEEE paperback
1962716088PN. New. 1962. Soft Cover. Date is original print. This is a reprint edition. . PN paperback
1981004910New York New York: Institute of Electrical and Electronics Engineers Inc. 1981. 1st . Hardcover. Fine/No Jacket. 4to - over 9¾" - 12" tall. 565pp.; HB lt.blue w/gilt spine reads: Pulsed Power Conference-1981; fine condition; cleantight pgs. Lectures & papers concerning Pulsed Power the storage of energy over a long period of time & subsequent release of power in a fraction of that time. graphs charts etc. <br/> <br/> Institute of Electrical and Electronics Engineers, Inc. hardcover
1999187606IEEE 1999. Paperbacks. All three volumes: as new clean tight & bright condition. Oversized. 2061pp. IEEE paperback
1999101265Piscataway NJ: IEEE 1999. Paperback. Near fine condition. 8.5" x 11. 2530pp. IEEE paperback
19981307748PN. New. 1998. Soft Cover. Date is original print. This is a reprint edition . PN paperback
1996USD_9780780333345IEEE 1996. 2nd. Paperback. UsedLikeNew/UsedLikeNew. IEEE paperback
1996AME_9780780333345IEEE 1996. 2nd. Paperback. New/New. IEEE paperback
1996DBS-9780780333345IEEE 1996. 2nd. Paperback. New. IEEE paperback
1996DBS-9780780333345IEEE 1996. 2nd. Paperback. New. IEEE paperback
1996DBS.Management-9780780335IEEE 1996. 1. Paperback. New. IEEE paperback
1996DBS.Management-9780780335IEEE 1996. 1. Paperback. New. IEEE paperback
1996AME_9780780335523IEEE 1996. N/A. Paperback. New/New. IEEE paperback
1996DBS-9780780335523IEEE 1996. 1. Paperback. New. IEEE paperback
1996DBS-9780780335523IEEE 1996. 1. Paperback. New. IEEE paperback
1996G0818672374I4N00IEEE 1996. Hardcover. Very Good. May have limited writing in cover pages. Pages are unmarked. ~ ThriftBooks: Read More Spend Less.Dust jacket quality is not guaranteed. IEEE hardcover
198806462New York: Institute of Electrical and Electronic Engineers. 1988. First Edition. Hardcover. Like New/No dust jacket. 11.2 x 8.5 x 1.5 inches. Hardcover 1988 Volume 2. May 25-27 1988 Marriott Marquis Hotel. Jacob Javits Convention Center. New York. The book is in excellent condition. The covers look great. The binding is tight. The front flyleaf is stamped. The interior pages are clean and unmarked. Electronic delivery tracking will be issued free of charge. Published as: IEEE MTT International Microwave Symposium digest 1988. Vol. 2 Institute of Electrical and Electronic Engineers. hardcover
1987150425005IEEE 1987-01-01. Hardcover. Very Good. VG Clean text IEEE hardcover
197976193Lexington MA: Honeywell Defense Electronics Division 1979. Presumed First Edition First printing. Spiral bound wraps. Good. 43 sheets printed on one side only plus covers. Cover has wear and soiling. Illustrations. HgCdTe or mercury cadmium telluride also cadmium mercury telluride MCT MerCad Telluride MerCadTel MerCaT or CMT is an alloy of cadmium telluride CdTe and mercury telluride HgTe with a tunable bandgap spanning the shortwave infrared to the very long wave infrared regions. The amount of cadmium Cd in the alloy can be chosen so as to tune the optical absorption of the material to the desired infrared wavelength. CdTe is a semiconductor with a bandgap of approximately 1.5 electronvolts eV at room temperature. HgTe is a semimetal which means that its bandgap energy is zero. Mixing these two substances allows one to obtain any bandgap between 0 and 1.5 eV. I-V characteristic of a photodiode. The linear load lines represent the response of the external circuit. The points of intersection with the curves represent the actual current and voltage for a given bias resistance and illumination. A photodiode is a semiconductor device that converts light into an electrical current. The current is generated when photons are absorbed in the photodiode. Photodiodes may contain optical filters built-in lenses and may have large or small surface areas. Photodiodes usually have a slower response time as their surface area increases. Photodiodes are similar to regular semiconductor diodes except that they may be either exposed to detect vacuum UV or X-rays or packaged with a window or optical fiber connection to allow light to reach the sensitive part of the device. Many diodes designed for use specifically as a photodiode use a PIN junction rather than a p-n junction to increase the speed of response. A photodiode is designed to operate in reverse bias. Honeywell Defense Electronics Division paperback
