Sizoo, Joseph RBiblio.com
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0484843583.Ghardcover. Good. Access codes and supplements are not guaranteed with used items. May be an ex-library book. hardcover
5325029like new. unknown
1162793198.Gpaperback. Good. Access codes and supplements are not guaranteed with used items. May be an ex-library book. paperback
1163373583.Ghardcover. Good. Access codes and supplements are not guaranteed with used items. May be an ex-library book. hardcover
1494040409.Gpaperback. Good. Access codes and supplements are not guaranteed with used items. May be an ex-library book. paperback
0548063613.Ghardcover. Good. Access codes and supplements are not guaranteed with used items. May be an ex-library book. hardcover
2012x-0470976993Blackwell Pub 2012. Hardcover. New. 1st edition. 402 pages. 9.84x6.93x0.94 inches. Blackwell Pub hardcover
2012SONG0470976993Wiley 2012-04-09. 1. hardcover. Used: Good. 6.95x0.92x9.92. Buy with confidence. Excellent Customer Service & Return policy. Wiley hardcover
2012DADAX0470976993Wiley 2012-04-09. 1. hardcover. New. 6.95x0.92x9.92. Buy with confidence. Excellent Customer Service & Return policy. Wiley hardcover
2001805742Hampton. Collectible - Very Good. 2001. First Printing. Soft Cover. Signed by Author D431 . Hampton paperback
0941594041.Gpaperback. Good. Access codes and supplements are not guaranteed with used items. May be an ex-library book. paperback
0941594033.Gpaperback. Good. Access codes and supplements are not guaranteed with used items. May be an ex-library book. paperback
2001474746Practicing Law Institute. Very Good. 2001. Soft Cover. Q168 . Practicing Law Institute paperback
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1465380868.Ghardcover. Good. Access codes and supplements are not guaranteed with used items. May be an ex-library book. hardcover
20101229993PN. New. 2010. Reprint Edition. Soft Cover. Date is copyright date; this is a later reprint edition . PN paperback
2014x-1138002356Routledge 2014. Paperback. New. reprint edition. 89 pages. 9.00x6.00x0.25 inches. Routledge paperback
2001Q-1568811357A K Peters/CRC Press 2001-02-09. Paperback. New. In shrink wrap. Looks like an interesting title! A K Peters/CRC Press paperback
2001SKU0499280A K Peters/CRC Press 2001-02-09. Paperback. Good. Textbook May Have Highlights Notes and/or Underlining BOOK ONLYNO ACCESS CODE NO CD Ships with Emailed Tracking A K Peters/CRC Press paperback
1568811357.Gpaperback. Good. Access codes and supplements are not guaranteed with used items. May be an ex-library book. paperback
2001DADAX1568811357A K PETERS 2001-02-09. 1. paperback. New. 6.14x0.80x9.21. Buy with confidence. Excellent Customer Service & Return policy. A K PETERS paperback
3540570934.Gpaperback. Good. Access codes and supplements are not guaranteed with used items. May be an ex-library book. paperback
2017x-1107168082Cambridge Univ Pr 2017. Hardcover. New. 92 pages. 9.00x6.25x0.50 inches. Cambridge Univ Pr hardcover
1107168082.Ghardcover. Good. Access codes and supplements are not guaranteed with used items. May be an ex-library book. hardcover
198876165Palos Verdes Peninsula CA: Northrop Corporation 1988. DTIC reprint. Staplebound. Good. This was prepared for the Director Defense Nuclear Agency under Contract NO. DNA 001-84-C-0196. It was approved for public release. DD Form 1473 lists the page count as 162. Illustrations. References. Cover has some wear. Some illustrations appear degraded from what would have appeared in the original publication. Results of a study of radiation effects on electronic materials devices and integrated circuits are presented in this report. Emphasis was placed on determining the underlying mechanisms responsible for observed radiation effects with a view toward gaining understanding of value in the development of radiation-hardened devices. Measurements and analyses were performed of the effects of single energetic neutrons and protons on silicon integrated circuits. This is a detailed description is given of the effects of radiation-induced displacement damage on device depletion regions. Single event upset studies included charge collection and transient current measurements on Si and GaAs devices following a single alpha-particle strike. The angular dependence of charge funneling was also investigated. The mechanisms of ionizing radiation effects on Si MOS devices were explored in detail using the thermally stimulated current technique and other measurement approaches. Data obtained by several techniques show that use of the radiation-induced shift of the capacitance-voltage curve at midgap is not generally valid for determining oxide trapped charge. Northrop Corporation unknown
